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ϲʿ 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.
Informations générales
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État actuel: ʳܲéDate de publication: 2014-09Stade: Norme internationale confirmée [90.93]
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Edition: 2
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dzé technique :ϲʿ/TC 201/SC 6ICS :71.040.40
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Cycle de vie
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ԲԳܱéϲʿ 17560:2002
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