Filtrar :
Norma o proyecto bajo la responsabilidad directa de 香港六合彩开奖/TC 201/SC 6 Secretar铆a | Etapa | ICS |
---|---|---|
Diagnostic method whether a binary organic mixture can be quantitated by the relative sensitivity factor methods for SIMS
|
20.00 |
|
Surface chemical analysis 鈥 Secondary-ion mass spectrometry 鈥 Method for depth profiling of arsenic in silicon
|
90.93 | |
Surface chemical analysis 鈥 Secondary-ion mass spectrometry 鈥 Calibration of the mass scale for a time-of-flight secondary-ion mass spectrometer
|
95.99 | |
Surface chemical analysis 鈥 Secondary ion mass spectrometry 鈥 Calibration of the mass scale for a time-of-flight secondary ion mass spectrometer
|
90.92 | |
Surface chemical analysis 鈥 Secondary ion mass spectrometry 鈥 Calibration of the mass scale for a time-of-flight secondary ion mass spectrometer
|
30.99 |
|
Surface chemical analysis 鈥 Secondary-ion mass spectrometry 鈥 Determination of boron atomic concentration in silicon using uniformly doped materials
|
95.99 | |
Surface chemical analysis 鈥 Secondary-ion mass spectrometry 鈥 Determination of boron atomic concentration in silicon using uniformly doped materials
|
90.93 | |
Surface chemical analysis 鈥 Secondary-ion mass spectrometry 鈥 Method for depth profiling of boron in silicon
|
95.99 | |
Surface chemical analysis 鈥 Secondary-ion mass spectrometry 鈥 Method for depth profiling of boron in silicon
|
90.93 | |
Surface chemical analysis 鈥 Secondary ion mass spectrometry 鈥 Linearity of intensity scale in single ion counting time-of-flight mass analysers
|
95.99 | |
Surface chemical analysis 鈥 Secondary ion mass spectrometry 鈥 Linearity of intensity scale in single ion counting time-of-flight mass analysers
|
60.60 | |
Surface chemical analysis 鈥 Secondary-ion mass spectrometry 鈥 Determination of relative sensitivity factors from ion-implanted reference materials
|
95.99 | |
Surface chemical analysis 鈥 Secondary-ion mass spectrometry 鈥 Determination of relative sensitivity factors from ion-implanted reference materials
|
60.60 | |
Surface chemical analysis 鈥 Secondary-ion mass spectrometry 鈥 Method for estimating depth resolution parameters with multiple delta-layer reference materials
|
90.93 | |
Surface chemical analysis 鈥 Secondary ion mass spectrometry 鈥 Correction method for saturated intensity in single ion counting dynamic secondary ion mass spectrometry
|
90.92 | |
Surface chemical analysis 鈥 Secondary ion mass spectrometry 鈥 Correction method for saturated intensity in single ion counting dynamic secondary ion mass spectrometry
|
20.00 |
|
Surface chemical analysis 鈥 Secondary ion mass spectrometry 鈥 Method for determining yield volume in argon cluster sputter depth profiling of organic materials
|
90.60 | |
Surface chemical analysis 鈥 Secondary ion mass spectrometry 鈥 Method for the measurement of mass resolution in SIMS
|
60.60 | |
Surface chemical analysis 鈥 Secondary-ion mass spectrometry 鈥 Method for depth calibration for silicon using multiple delta-layer reference materials
|
90.93 | |
Surface chemical analysis 鈥 Secondary-ion mass spectrometry 鈥 Repeatability and constancy of the relative-intensity scale in static secondary-ion mass spectrometry
|
90.93 |
No se ha encontrado ning煤n registro que coincida. Pruebe a cambiar los ajustes de filtro.